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(R)
HCF4521B
24 STAGE FREQUENCY DIVIDER
s s s s s
s
VERY LOW QUIESCENT CURRENT HIGH NOISE IMMUNITY VOLTAGE SUPPLY RANGE 3V TO 18V ALL STAGES ARE RESETTABLE RESET DISABLES THE RC OSCILLATORFOR LOW STANDBY POWER DRAIN RC AND CRYSTAL OSCILLATOR OUTPUT ARE CAPABLE OF DRIVING EXTERNAL LOADS EY M1 (Plastic Package) (Micro Package) ORDER CODES : HCF4521BEY HCF4521BM1
DESCRIPTION The HCF4521B is a monolithic integrated circuit, available in 16-lead dual-in-line plastic package and plastic micro packages. The HCF4521B have a chain of 24 flip-flops with an input circuit that allows three modes of operation. The input circuit functions as a crystal or an RC oscillator or as an input buffer for an external oscillator. Each flip-flop performs a divide-by-two function giving a total count of 224 = 16,777,216. The count advances on the negative going edge of the clock. Access is available to the final seven stages giving the device added flexibility.
PIN CONNECTION
February 1999
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HCF4521
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATING
Symbol VDD * Vi II Ptot Supply Voltage Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range Operating Temperature Storage Temperature Parameter Value -0.5 to +18 -0.5 to VDD + 0.5 10 200 100 -40 to +85 -65 to +150 Unit V V mA mW mW
o o
Top Tstg
C C
Stresses above those listedunder "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation ofthe device atthese or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratingconditions for external periods may affect device reliability. * Allvoltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol VDD VI Top Supply Voltage Input Voltage Operating Temperature Parameter Value 3 to 15 0 to VDD -40 to +85 Unit V V
o
C
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FUNCTIONAL DIAGRAM
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STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions, voltages References to VSS)
Symb ol Parameter T est Cond it ios VO |IO | V DD -40 (A) (V) Min. (V) 0/5 5 0/10 10 0/15 15 0/5 <1 5 4.95 0/10 < 1 10 9.95 0/15 < 1 15 14.95 5/0 <1 5 10/0 < 1 10 15/0 < 1 15 0.5/4.5 < 1 5 3.5 1/9 < 1 10 7 1.5/13.5 < 1 15 11 4.5/0.5 < 1 5 9/1 < 1 10 13.5/1.5 < 1 15 0/5 2.5 5 -1.53 0/5 4.6 5 -0.52 0/10 9.5 10 -1.3 0/15 13.5 15 -3.5 0/5 0.4 5 0.52 0/10 0.5 10 1.3 0/15 1.5 15 3.6 VI (V) 0/18 Any Input Any Input 18
o
IL
Quiescent Current
VOH
Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Output Drive Current
VOL
VIH
VIL
IOH
IOL
Output Sink Current
Valu e o C 25 C Max. Min. T yp. 20 0.04 40 0.04 80 0.04 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 11 1.5 3 4 -1.36 -3.2 -0.44 -1 -1.1 -2.6 -3.0 -6.8 0.44 1 1.1 2.6 3.0 6.8 0.1 10-5 5
Un it 85 o C Max. Min . Max. 20 150 40 300 80 600 4.95 9.95 14.95 0.05 0.05 0.05 0.05 0.05 0.05 3.5 7 11 1.5 1.5 3 3 4 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 0.1 7.5 1
A
V
V
V
V
mA
mA
IIH, IIL CI
Input Leakage Current Input Capacitance
A pF
TheNoise Margin for both "1" and "0" level is: 1V min.withV DD = 5 V, 2 V min.with VDD = 10 V, 2.5 V min. with VDD= 15 V
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HCF4521
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 oC, CL = 50 pF, RL = 200 K, typical temperaturecoefficent for all VDD values is 03 %/oC, all input rise and fall times= 20 ns)
Symb ol Parameter T est Cond ition s V DD (V) 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 385 150 120 Min. Value Typ. Max. 100 50 40 100 50 40 4.5 1.7 1.3 6.0 2.2 1.7 1300 500 375 140 55 40 3.5 9 12 200 100 80 200 100 80 9.0 3.5 2.7 12 4.5 3.5 2600 1000 750 ns 2 5 6.5 15 15 15 1400 600 450 700 300 225 Un it
tPLH
Output Rise Time
ns
tPHL
Output Fall Time
ns
tPHL tPLH tPHL tPLH tPHL
Propagation Delay Time Clock to Q18
s
Propagation Delay Time Clock to Q24
s
Propagation Delay Time RESET to Qn
ns
tWH(cl)
Clock Pulse Width
fcl
Clock Pulse Frequency
MHz
tTLH tTHL tW(R)
Clock Rise and Fall Time
s
Reset Pulse Width
ns
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HCF4521
Typical Output Low (sink) Current Characteristics Minimum Output Low (sink) Current Characteristics
Typical Output High (source) Current Characteristics
Minimum Output High (source) Current Characteristics
Typical Power Dissipation vs, Frequency
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FUNCTIONAL TEST SEQUENCE
Inpu ts RESET 1 0 0 0 0 0 0 0 0 0 In2 0 1 0 1 1 0 0 1 1 0 Out2 0 1 0 1 1 0 0 0 0 1 V SS ' VDD VDD VDD VDD VDD VDD GND GND GND GND Outpu ts V DD ' GND GND GND GND GND GND GND VDD VDD VDD Q18 thru Q24 0 0 0 0 1 1 1 1 1 0 Counter converted back to 24-stages in series mode. Out2 converts back to an output Counter ripples from an all "1" state to an all "0" stage. Counter is in three 8-stage sections in parallel mode. Counter is reset. In2 and Out2 are connected togheter First "0" to "1" transition on In2, Out2 node. 255 "0" to "1" transitions are clocked into this In2, Out2 node. The 255th "0" to "1" transition. Co mmen ts
A test function (see fig.8) has been included forthe reduction oftest time required to exercise all 24 counter stages. This test function divides the counter intothree 8-stage sections and 255 counts are loaded in each of the 8-stage sections in parallel. All flip-flopare now ata logic "1". The counter is now returned to the normal 24-stages in series configuration. One more pulse is entered intoInput 2 (In2) which will cause the counter to ripple from an all "1" state to an all "0" state.
RC Oscillator Circuit
Functional Test Circuit
1 2.3 RTC C RS 2 RTC f in Hz, R in Ohms, C inFarads f
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TYPICAL DATA FOR CRYSTAL OSCILLATOR CIRCUIT
Characteristic Crystal Characteristics Resonant Frequency Equivalent Reistance, RS External Resistor/Capacitor Values RO CT CS Frequency Stability Frequency Change as a Function of VDD (TA = 25 oC) V DD Change from 5V to 10V V DD Change from 10V to 15V Frequency Change as a Function of Temperature (VDD = 10 V) T A Change from -55 oC to 25 oC HCF4521B only Complete Oscillator * T A Change from 25 oC to 125 oC HCF4521B only Complete Oscillator *
* Complete oscillator includes crystal, capacitors and resistors.
500 kHz CIRCUIT 500 1 47 82 20
50 kHz CIRCUIT
Un it
50 6.2 750 82 20
kHz k k pF pF
6 2
2 2
ppm ppm
-4 100 -2 -160
-2 120 -2 -560
ppm ppm ppm ppm
Crystal Oscillator Circuit
* Optional forlow power operation.
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HCF4521
TEST CIRCUITS Quiescent Device Current. Noise Immunity.
Input Leakage Current.
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HCF4521
Plastic DIP-16 (0.25) MECHANICAL DATA
mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 inch TYP. MAX.
DIM.
P001C
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HCF4521
SO-16 MECHANICAL DATA
DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 8 (max.) 0.149 0.181 0.019 10 6.2 0.35 0.19 0.5 45 (typ.) 0.385 0.228 0.050 0.350 0.157 0.208 0.050 0.024 0.393 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.004 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
P013H
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HCF4521
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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